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| power transistors www.jmnic.com BD680 silicon pnp transistors features e c b with to-126 package in monolithic darlington configuration this transistor is int ended for use in medium power linar and switching applications complement to type bd679 absolute maximum ratings tc=25 symbol parameter rating unit v cbo collector to base voltage 80 v v ceo collector to emitter voltage 80 v v cer emitter to base voltage v eb emitter to base voltage 5 v i b base current i c collector current-continuous 4 a p d total power dissipation@tc=25 40 w t j junction temperature 150 t stg storage temperature -55~150 to-126 electrical characteristics tc=25 symbol parameter conditions min max unit v ceo(sus) collector-emitter sustaining voltage i c =50ma; i b =0 80 v v cbo collector-base voltage i ceo collector cutoff current v ce =40v; i b =0 500 ua i cbo collector cutoff current v cb =80v; i e =0 200 ua i ebo emitter cutoff current v eb =5v; i c =0 2 ma v ebo emitter cutoff current v ce(sat-1) collector-emitter saturation voltages i c =1.5a; i b =30ma 2.5 v v ce(sat-2) collector-emitter saturation voltages v ce(sat-3) collector-emitter saturation voltages h fe-1 forward current transfer ratio i c =1.5a; v ce =3v 750 h fe-2 forward current transfer ratio v be(sat-1) base-emitter saturation voltage v be(sat-2) base-emitter saturation voltage f t current gain-bandwidth product
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